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  <title>SINTESA DAN FABRIKASI LAPISAN TIPIS SIO2 DARI ABU SEKAM PADI DENGAN METODE SOL-GEL</title>
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  <namePart>GEMIATIK</namePart>
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   <roleTerm type="text">Primary Author</roleTerm>
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  <place>
   <placeTerm type="text">Banda Aceh</placeTerm>
   <publisher>Universitas Syiah Kuala</publisher>
   <dateIssued>2015</dateIssued>
  </place>
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  <languageTerm type="code">id</languageTerm>
  <languageTerm type="text">Indonesia</languageTerm>
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 <note>ABSTRAK&#13;
Telah dilakukan sintesa  dan karakterisasi  SiO2  dari abu sekam padi  serta &#13;
pembuatan  lapisan tipis SiO2  melalui metode  Sol-Gel.  Penelitian ini bertujuan &#13;
untuk mengetahui struktur kristal  silika (SiO2)  dari  abu sekam padi dan untuk &#13;
mengetahui pengaruh variasi temperatur  annealing  terhadap sifat  optik lapisan &#13;
tipis SiO2. Sintesa silika abu sekam padi  dilakukan melalui metode ekstraksi alkali &#13;
dan lapisan tipis  dipreparasi dari bahan silika (SiO2) abu sekam padi  dan &#13;
dilarutkan dengan menggunakan ethanol. Larutan  SiO2  diaduk  dengan &#13;
menggunakan  magnetik  stirrer selama 60 menit hingga terbentuk Sol. Sol larutan &#13;
kemudian ditumbuhkan di atas substrat kaca melalui teknik  dip Coating  dengan &#13;
kecepatan tarik  +  3 cm/jam. Selanjutnya lapisan tipis SiO2  di-annealing  dengan &#13;
variasi temperatur 400 &#13;
o&#13;
C, 450 &#13;
o&#13;
C, 500 &#13;
o&#13;
C, 550 &#13;
o&#13;
C dan 600 &#13;
o&#13;
C dengan waktu tahan &#13;
selama 60 menit. Silika (SiO&#13;
2) abu sekam padi dan lapisan tipis SiO&#13;
2  selanjutnya &#13;
dikarakterisasi menggunakan  XRD  dan UV-Vis. Hasil karakterisasi silika (SiO2) &#13;
abu sekam  berdasarkan  XRD  menunjukkan bahwa silika (SiO2) abu sekam  padi&#13;
memiliki tingkat kristal dengan struktur amorf. Berdasarkan hasil karakterisasi &#13;
UV.Vis diperoleh  semakin tinggi temperatur  annealing  maka diperoleh  nilai &#13;
transmitansi yang  semakin  rendah  dan koefesien  absorp  yang semakin tinggi. &#13;
Band gap optik lapisan tipis SiO2 &#13;
diperoleh berkisar antara 3,57 eV- 3,68 eV. &#13;
Kata kunci: Lapisan Tipis SiO2 &#13;
abu sekam padi, waktu annealing, struktur kristal, &#13;
transmitansi, Koefesien absopsi, Band gap optik.&#13;
vi&#13;
ABSTRACT&#13;
The synthesis  has performed and characterization thin film of SiO2  from rice husk &#13;
ash as well as the manufacture thin  film  of    SiO2  by Sol-Gel method. This study &#13;
aims to determine the crystal structure of silica (SiO&#13;
2)  from  rice husk ash and to &#13;
determine the influence of annealing temperature variations of the optical &#13;
properties thin  film  of SiO2&#13;
. Synthesis  silica rice husk ash made through alkali &#13;
extraction method and a thin  film  of material prepared silica (SiO2) rice husk ash &#13;
and dissolved using ethanol. SiO&#13;
2  solution was stirred by using a magnetic stirrer &#13;
for 60 minutes to form Sol. Sol solution then grown on a glass substrate by  dip &#13;
coating techniques with the speed of drag + 3 cm/hour. Furthermore, a thin film of &#13;
SiO2  annealing with variations in temperature of 400 °C, 450 °C, 500 °C, 550 °C &#13;
and 600 °C with a hold time of 60 minutes. Silica (SiO2) rice husk ash and a thin &#13;
film of   SiO2  further characterized using  XRD and UV-Vis. Results of &#13;
characterization of silica (SiO&#13;
2) husk ash by XRD showed that the silica (SiO&#13;
2) &#13;
husk ash has a level of crystals with amorphous structure. Based on the results &#13;
obtained UV.Vis  characterization of the higher temperature annealing of the &#13;
obtained transmittance values  are lower and the higher the coefficient absorp. &#13;
Optical band gap thin film of SiO2 obtained ranged from 3.57 to 3.68 eV.&#13;
Keywords: Thin film SiO2 rice husk ash , annealing time , the crystal structure , &#13;
transmittance , the absorption coefficient , the optical band gap .</note>
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